| PART |
Description |
Maker |
| IRG4RC10S IRG4RC10 IRG4RC10STR IRG4RC10STRL IRG4RC |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4BC30W-S IRG4BC30WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
| P8-SC-111 P8-PC-111 P8-20P-C QR_P8-20P-C QR_P8-20P |
Ultra-small Rectangular Multi-electrode solderless Connectors for Rack and Panel Applications
CAP CER 56PF 50V C0G 5% 0402
CAP CER 1500PF 10V SL 5% 0402
CAP CER 1800PF 10V SL 5% 0402
CAP CER 2200PF 10V SL 5% 0402
CAP CER 2700PF 10V SL 5% 0402
CAP CER 3300PF 10V SL 5% 0402
CAP CER 47PF 50V C0G 5% 0402
CAP CER 39PF 50V C0G 5% 0402
CAP CER 3900PF 10V SL 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
CAP CER 68PF 50V C0G 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
CAP CER 33PF 50V C0G 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
|
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
|
| 55GN01MA 55GN01MA-TL-E |
RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP
|
ON Semiconductor
|
| 55GN01FA ENA1113A |
RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single SSFP
|
ON Semiconductor
|
| CT30SM-12 CT30SM-1 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER UPS USE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
GENERAL INVERTER . UPS USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 500mA的一（c）|
|
APEM SA
|
